vs-hfa08ta60cspbf www.vishay.com vishay semiconductors revision: 26-feb-16 1 document number: 94596 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 hexfred ? ultrafast soft recovery diode, 2 x 4 a features ? ultrafast and ultrasoft recovery ? very low i rrm and q rr ? specified at operating conditions ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? aec-q101 qualified ? material categorization: ? for definitions of compliance please see www.vishay.com/doc?99912 benefits ? reduced rfi and emi ? reduced power loss in diode and switching transistor ? higher frequency operation ? reduced snubbing ? reduced parts count description vs-hfa08ta60cspbf is a state of the art center tap ultrafast recovery diode. empl oying the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. with basi c ratings of 600 v and 4 a per leg continuous current, the vs-hfa08ta60cspbf is especially well suited for use as the companion diode for igbts and mosfets. in addition to ultrafast recovery time, the hexfred ? product line features extremely low values of peak recovery current (i rrm ) and does not exhibit any tendency to snap-off during the t b portion of recovery. the hexfred features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. these hexfred advantages can help to significantly reduce snubbing, component count and heatsink sizes. the hexfred vs-hfa08ta60cspbf is ideally suited for applications in power supp lies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. product summary package to-263ab (d 2 pak) i f(av) 8 a v r 600 v v f at i f 2.2 v t rr (typ.) 17 ns t j max. 150 c diode variation common cathode d 2 pak base common catho d e common catho d e ano d eano d e 2 1 2 3 absolute maximum ratings parameter symbol test conditions values units cathode to anode voltage v r 600 v maximum continuous forward current per leg i f t c = 100 c 4 a per device 8 single pulse forward current i fsm 25 maximum repetitive forward current i frm 16 maximum power dissipation p d t c = 25 c 25 w t c = 100 c 10 operating junction and storage temperature range t j , t stg -55 to +150 c
vs-hfa08ta60cspbf www.vishay.com vishay semiconductors revision: 26-feb-16 2 document number: 94596 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test condition s min. typ. max. units cathode to anode ? breakdown voltage v br i r = 100 a 600 - - v maximum forward voltage v fm i f = 4.0 a see fig. 1 -1.51.8 i f = 8.0 a - 1.8 2.2 i f = 4.0 a, t j = 125 c - 1.4 1.7 maximum reverse ? leakage current i rm v r = v r rated see fig. 2 - 0.17 3.0 a t j = 125 c, v r = 0.8 x v r rated - 44 300 junction capacitance c t v r = 200 v see fig. 3 - 4.0 8.0 pf series inductance l s measured lead to lead 5 mm from package body - 8.0 - nh dynamic recovery characteristics (t j = 25 c unless otherwise specified) parameter symbol test conditio ns min. typ. max. units reverse recovery time ? see fig. 5, 6 and 16 t rr i f = 1.0 a, di f /dt = 200 a/s, v r = 30 v - 17 - ns t rr1 t j = 25 c i f = 4.0 a ? di f /dt = 200 a/s ? v r = 200 v -2842 t rr2 t j = 125 c - 38 57 peak recovery current ? see fig. 7 and 8 i rrm1 t j = 25 c - 2.9 5.2 a i rrm2 t j = 125 c - 3.7 6.7 reverse recovery charge ? see fig. 9 and 10 q rr1 t j = 25 c - 40 60 nc q rr2 t j = 125 c - 70 105 peak rate of fa ll of recovery ? current during t b ? see fig. 11 and 12 di (rec)m /dt1 t j = 25 c - 280 - a/s di (rec)m /dt2 t j = 125 c - 235 - thermal - mechanical specifications parameter symbol test conditions min. typ. max. units lead temperature t lead 0.063" from case (1.6 mm) for 10 s - - 300 c thermal resistance, ? junction to case r thjc --5.0 k/w thermal resistance, ? junction to ambient r thja typical socket mount - - 80 weight -2.0- g -0.07- oz. mounting torque 6.0 (5.0) - 12 (10) kgf cm (lbf in) marking device case style d 2 pak hfa08ta60cs
vs-hfa08ta60cspbf www.vishay.com vishay semiconductors revision: 26-feb-16 3 document number: 94596 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - maximum forward voltage drop vs. instantaneous forward current fig. 2 - typical reverse current vs. reverse voltage fig. 3 - typical junction ca pacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics t j = 150 c t j = 125 c t j = 25 c i f - instantaneous forwar d current (a) v fm - forwar d voltage drop (v) 0123456 0.1 1 100 10 94596_01 t j = 125 c t j = 25 c t j = 150 c i r - reverse current (a) v r - reverse voltage (v) 0 100 200 300 400 500 0.001 0.01 0.1 1 10 100 1000 94596_02 10 100 1 10 100 1000 1 v r - reverse voltage (v) c t - junction capacitance (pf) t j = 25 c 94596_03 0.01 0.1 1 0.00001 94596_04 0.0001 0.001 0.01 0.1 1 t 1 - rectangular pulse duration (s) z thjc - thermal response s ingle pul s e (thermal re s i s tance) 10 d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01 p dm t 2 t 1 note s : 1. duty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c
vs-hfa08ta60cspbf www.vishay.com vishay semiconductors revision: 26-feb-16 4 document number: 94596 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - typical reverse recovery time vs. di f /dt fig. 6 - typical recovery current vs. di f /dt fig. 7 - typical stored charge vs. di f /dt fig. 8 - typical di (rec)m /dt vs. di f /dt 50 40 20 100 94596_05 1000 d i f / d t (a/s) t rr (ns) 25 45 35 30 i f = 8 a i f = 4 a v r = 200 v t j = 125 c t j = 25 c 14 12 0 100 94596_06 1000 d i f / d t (a/s) i rr (a) 8 i f = 8 a i f = 4 a v r = 200 v t j = 125 c t j = 25 c 4 10 6 2 200 160 100 94596_07 1000 d i f / d t (a/s) q rr (nc) i f = 8 a i f = 4 a v r = 200 v t j = 125 c t j = 25 c 80 40 120 0 1000 100 100 94596_08 1000 d i f / d t (a/s) d i (rec)m / d t (a/s) v r = 200 v t j = 125 c t j = 25 c i f = 8 a i f = 4 a
vs-hfa08ta60cspbf www.vishay.com vishay semiconductors revision: 26-feb-16 5 document number: 94596 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 9 - reverse recovery parameter test circuit fig. 10 - reverse recovery waveform and definitions irfp250 d.u.t. l = 70 h v r = 200 v 0.01 g d s di f /dt adju s t q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of current through zero cro ss ing (2) i rrm - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going i f to point where a line pa ss ing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current. (4) q rr - area under curve defined by t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr
vs-hfa08ta60cspbf www.vishay.com vishay semiconductors revision: 26-feb-16 6 document number: 94596 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table links to related documents dimensions www.vishay.com/doc?95046 part marking information www.vishay.com/doc?95054 packaging information www.vishay.com/doc?95032 ordering information (example) preferred p/n quantity per tube minimum order quantity packaging description vs-hfa08ta60cspbf 50 1000 antistatic plastic tube vs-hfa08ta60cstrrp 800 800 13" diameter reel VS-HFA08TA60CSTRLP 800 800 13" diameter reel 2 - hexfred ? family 1 - vishay semiconductors product 3 - process designator: a = electron irradiated 4 - current rating (08 = 8 a) 5 - package outline (ta = to-220, 3 leads) 6 - voltage rating (60 = 600 v) 7 - circuit configuration (c = common cathode) 8 - s = d 2 pak 10 9 device code 5 1 3 2 4 6 7 8 9 10 vs- hf a 08 ta 60 c s trl pbf - ? pbf = lead (pb)-free, for tube packaged ? trl = tape and reel (left oriented) ? trr = tape and reel (right oriented) - ? none = tube ? p = lead (pb)-free, for tape and reel packaged
outline dimensions www.vishay.com vishay semiconductors revision: 08-jul-15 1 document number: 95046 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 d 2 pak dimensions in millimeters and inches notes (1) dimensioning and tolerancing per asme y14.5 m-1994 (2) dimension d and e do not include mold flas h. mold flash shall not exceed 0.127 mm (0 .005") per side. these dimensions are measu red at the outmost extremes of the plastic body (3) thermal pad contour optional with in dimension e, l1, d1 and e1 (4) dimension b1 and c1 a pply to base metal only (5) datum a and b to be dete rmined at datum plane h (6) controlling dimension: inch (7) outline conforms to jedec ? outline to-263ab symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.06 4.83 0.160 0.190 d1 6.86 8.00 0.270 0.315 3 a1 0.00 0.254 0.000 0.010 e 9.65 10.67 0.380 0.420 2, 3 b 0.51 0.99 0.020 0.039 e1 7.90 8.80 0.311 0.346 3 b1 0.51 0.89 0.020 0.035 4 e 2.54 bsc 0.100 bsc b2 1.14 1.78 0.045 0.070 h 14.61 15.88 0.575 0.625 b3 1.14 1.73 0.045 0.068 4 l 1.78 2.79 0.070 0.110 c 0.38 0.74 0.015 0.029 l1 - 1.65 - 0.066 3 c1 0.38 0.58 0.015 0.023 4 l2 1.27 1.78 0.050 0.070 c2 1.14 1.65 0.045 0.065 l3 0.25 bsc 0.010 bsc d 8.51 9.65 0.335 0.380 2 l4 4.78 5.28 0.188 0.208 c b detail a c2 a a a 0.004 b m a lead tip (3) (3) view a - a (e) (d1) e1 b h a1 detail ?a? rotated 90 cw scale: 8 :1 l gauge plane 0 to 8 l3 l4 seating plane section b - b and c - c scale: none (4) (4) ( b , b 2) b 1, b 3 (c) c1 base metal plating conforms to jedec ? outline d 2 pak (smd-220) 13 2 d c a l2 e (2)(3) (2) 4 h bb 2 x b 2 x b 2 l1 0.010 a b m m (3) e 2 x pad layout min. 11.00 (0.43) min. 9.65 (0.3 8 ) min. 3. 8 1 (0.15) min. 2.32 (0.0 8 ) 17.90 (0.70) 15.00 (0.625) 2.64 (0.103) 2.41 (0.096)
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